Copper indium diselenide (CuInSe2) thin films were deposited by using electrochemical deposition technique. The electrochemical parameters were optimized with the aid of cyclic voltammetry for slow scan rate. CuInSe2 thin films were electrodeposited on FTO coated glass substrates at -0.6 V and -0.8 V versus Ag/AgCl reference electrode. The films were thermally treated at 400 0C for 15 minutes to improve the homogeneity and degree of crystallinity. The electrical properties have been studied with the help Autolab potentiostat/Galvanostat.